Advantages of InGaP / GaAs HBT

• Superior reliability
• Less temperature sensitivity
• Lower turn-on voltage
• Lower leakage current
• Excellent linearity

Applications:

Technology	Process	Application
HBT PA	WLAN	High Linearity for Handset and WLAN PAs
	High Gain PA	Gain Block with High Gain
	HBV PA	HBV PA with Stringent Ruggedness
IPD	High Q LCR on GaAs	Filter and Matching Passive Components
GaAs pHEMT	0.5 um Power	PA and LNA to 20GHz
	0.5 um Switch	Low Cost Switches

Features:
- 16 masks layers That Include Frontside And TWV Process
- MIM capacitor, TaN and Inductor as Passive Component

Specification:

AWSC InGaP HBT Process Technologies
Parameter	WLAN	High Gain PA	HBV PA
Beta	78	105	78
Vbe	1.35	1.36	1.36
BVCEO	14	13	18.5
BVCBO	25	23.5	33
BVEBO	7	7	7
Ft (GHz)	28.5	33	28
Fmax (GHz)	44	40	45.5

Product Applications

• Quad Band GSM PA
• CDMA PA; Cellular and PCS
• Gain Block
• WLAN (802.11a/b/g/n)
• 4G PA ; LTE and WiMax