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InGap/GaAs HBT
pHEMT
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CPV Solar Cell Technology
  Features:
    - 6-Inch GaAs/Ge Wafer
    - Customer Provided Epitaxy Technology
    - 4 um Thick Metal
    - Minimum 5 um Wide Metal Lines
    - Ag Based Metallization
    - Evaporated/Sputtered/PECVD AR Layers
    - RIE Etch For AR Layers

Solar Wafer Photo

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Copyright 2001 Advanced Wireless Semiconductor Commpany
Last modifired: 2012/03/29