The key features of InP HBT process are: |
1. MBE epitaxy
2. NPN transistor
3. InAlAs Emitter Layer
4. Non-self-aligned Emitter / Base process
5. Carbon-doped base layer
6. Sputtered TaN thin film resistor
7. 3-layer metal, polyimide technology
8. Gold (Au) metallization
9. PECVD Si3N4 capacitor and passivation
10. 14 mask layers process
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| Data Sheet of Q1x6 InP HBT for Optoelectronic Application |
Unit Cell - Q6 (1x6 um2) |
| Emitter Layer |
InAlAs |
| Emitter Size |
6 um2 |
| Beta@Ic = 10mA |
40 |
| Vbe@Ic=10 mA |
0.72 V |
| BVCEO |
6.0 V |
| BVCBO |
10 V |
| BVEBO |
3.8 V |
ft@VCE=2V
IC=50 KA/cm2 |
100 GHz |
fmax@VCE=2V
IC=50 KA/cm2 |
140 GHz |
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InP HBT Products for Optoelectronic Communication (OC-768 and OC-192) |
- Modulator drivers, TIA, MUX/DMUX, CDR, LA/AGC
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