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InGap/GaAs HBT
pHEMT
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0.5 um Switch pHEMT Process
  • Optical gate lithography for low-cost manufacturing
  • Ideal for switches, gain amplifiers & LNAs
  Applications:
    - Switches
    - Gain blocks
    - Low noise amplifiers
Parameter Typical
Idss (mA/mm) 270
Imax (mA/mm) 450
Vp (V) -1
BVgd (V) >15
Ron 1.8
  Features:
    - 0.5 um optical gate stepper lithography
    - High resistance resistor > 1000 ohm/square
    - Low insertion loss and high isolation
    - Super low 2nd and 3rd harmonics
    - Low cost production process
    - Excellent reliability

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Copyright 2001 Advanced Wireless Semiconductor Commpany
Last modifired: 2011/11/21