| The key features of pHEMT process: |
1. MBE Epitaxy
2. Depletion Mode FET
3. InGaAs Channel Layer
4. Recess Process
5. 0.5 um Gate Length
6. GaAs and TaN Thin Film Resistors
7. 2-layer metal, Si3N4 Interlayer Dielectric Layer
8. Gold (Au) Metallization
9. PECVD Si3N4 Capacitor and Passivation
10. Backside Via-Holes
|
| Data of 0.5 um Gate pHEMT for Wireless Applications |
| Idss | 220 mA/mm | 55 mA/mm |
| Vpo | -0.8 Volts | -0.4 Volts |
| Gm | 350 mS/mm | 250 mS/mm |
| Vbr | >14 Volts | >14 Volts |
| N Resistor | 160 Ohm SQ | 160 Ohm SQ |
| N- Resistor | 500 Ohm SQ | 1500 Ohm SQ |
| Ft | 25 GHz | 20 GHz |
| Fmax | >60 GHz | >60 GHz |
|
Product for Wireless Communication |
- Switch
- Low Noise Amplifier
- Power Amplifier
|
