AWSC HBT technology
utilizes non-self-aligned process with InGaP Emitter and Carbon-doped Base layer material
for wireless and optoelectronic application. The 16 mask layer process has TaN thin film
resistor, PECVD Si3N4 capacitor, passivation, 2 level Au-based metal and backside via
process
Key
features of HBT process
1. MOCVD Epitaxy
2. NPN Transistor
3. InGaP Emitter Layer
4. Non-Self-Aligned Emitter / Base Process
5. Carbon-Doped Base Layer
6. Thin Film Resistor
7. 2-Layer Metal Technology
8. Gold (Au) Metalization
9. PECVD Si3N4 Capacitor and Passivation
10. Backside Via process
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Copyright 2001 Advanced Wireless Semiconductor Commpany
Last modifired: 2009/04/08