AWSC HBT technology utilizes non-self-aligned process with InGaP Emitter and Carbon-doped Base layer material for wireless and optoelectronic application. The 16 mask layer process has TaN thin film resistor, PECVD Si3N4 capacitor, passivation, 2 level Au-based metal and backside via process

Key features of HBT process    1. MOCVD Epitaxy    2. NPN Transistor    3. InGaP Emitter Layer    4. Non-Self-Aligned Emitter / Base Process    5. Carbon-Doped Base Layer    6. Thin Film Resistor    7. 2-Layer Metal Technology    8. Gold (Au) Metalization    9. PECVD Si3N4 Capacitor and Passivation   10. Backside Via process

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