Features:
- 6-Inch GaAs/Ge Wafer
- Customer Provided Epitaxy Technology
- 4 um Thick Metal
- Minimum 5 um Wide Metal Lines
- Ag Based Metallization
- Evaporated/Sputtered/PECVD AR Layers
- RIE Etch For AR Layers
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question or comments about this web site.
Copyright 1999 Advanced Wireless Semiconductor Commpany
Last modifired: 2012/03/29
