AWSC HBT technology utilizes non-self-aligned process with InGaP Emitter and Carbon-doped Base layer material for wireless and optoelectronic application. The 16 mask layer process has TaN thin film resistor, PECVD Si3N4 capacitor, passivation, 3 level Au/Copper-based metal and Au/Copper backside via process

Key Features of HBT Process MOCVD Epitaxial NPN Transistor InGaP Emitter Layer Non-Self-Aligned Emitter / Base Process Carbon-Doped Base Layer Thin Film Resistor 3-Layers Metal Technology Copper And Gold (Au) Metallization PECVD Si3N4 Capacitor and Passivation Backside Via process