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AWSC
HBT technology utilizes non-self-aligned process with
AlGaAs/InGaP Emitter and Carbon-doped Base layer material.
The 12 mask layer process has TaN thin film resistor,
PECVD Si3N4 capacitor and passivation, 2 level Au-based
metal. |
|
| Description
of HBT Process
The key
features of HBT process are
- MOCVD
Epitaxy
- NPN
Transistor
- AlGaAs/InGaP
Emitter Layer
- Non-Self-Aligned
Emitter / Base Process
- Carbon-Doped
Base Layer
- Sputtered
TaN Thin Resistor
- 2-Layer
Metal Technology
- Gold
(Au) Metalization
- PECVD
Si3N4 Capacitor and Passivation
- 12
Mask Layer Process
|
HBT
Characteristics
| Emitter |
AlGaAs |
InGaP |
| Beta
@Ic=10 mA |
50 |
50 |
| Vbe@Ic=10mA |
1.40 V |
1.35 V |
| BVceo |
13 V |
13 V |
| BVcbo |
20 V |
20 V |
| BVebo |
6.6 V |
7.8 V |
|
Ft@Vce=3V
Ic=10 mA
|
30 GHz |
30 GHz |
|
Fmax@Vce=3V
Ic=10 mA
|
40 GHz |
45 GHz |
|
-
 |
AWSC
HBT technology utilizes non-self-aligned process with
AlGaAs/InGaP Emitter and Carbon-doped Base layer material.
The 12 mask layer process has TaN thin film resistor,
PECVD Si3N4 capacitor and passivation, 2 level Au-based
metal. |
-
|
|
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Copyright 1999 Advanced Wireless Semiconductor Commpany
Last modifired: 2005/03/11
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