0.5um ED pHEMT

Features

- MOCVD Epitaxial
- ESD Protection Diode
- 0.5um N-Channel Depletion Mode FET
- 0.5um T-Gate N-Channel Enhancement Mode FET
- P-Channel FET (Optional)
- 1,400 Ohm/Square Thin Film Resistor
- 2-Layers Metal Technology
- Gold (Au) Metallization
- PECVD Si3N4 Capacitor and Passivation
- Backside Via Process or Copper Pillar Bump Process

Specification

Parameter		Typical	Unit
D-pHEMT	Idss	190	mA/mm
	Imax@0.6V	360	mA/mm
	VPo	-0.75	V
	Gm0@0V	360	mS/mm
	Ron@0V	1.9	mm*ohm
	BVdgo	15	V
	Ft	32	GHz
	Fmax	61	GHz
E-pHEMT	Idss@Vgs=0.7V	140	mA/mm
	Ids@Vgs=0V	0.0001	mA/mm
	VPo	0.25	V
	Gm0@0.7V	550	mS/mm
	Ron@0.7V	1.8	mm*ohm
	BVdgO	12	V
	Ft	34	GHz
	Fmax	59	GHz
	NFmin (@ 6 GHz)	0.68	dB

Applications

- Idea for Low Noise Amplifiers
- Switch and LNA in One Chip