InGaP HBT
Features
- MOCVD Epitaxial
- InGaP Emitter Layer
- Carbon-Doped Base Layer
- GaAs Dry Etch For Accurate Dimension Control
- GaAs Dry Etch Allow MTL1 To Cross Base Pedestal In 4 Directions
- Thin Film Resistor
- 3-Layers Metal Technology
- Gold (Au) Metallization
- MTL1/MTL2 Connect in 4 Directions
- PECVD Si3N4 Capacitor and Passivation
- Backside Via Process Or Bump Process
- 228X PDKS Support Electro-Thermal Function
Specification
| Parameter |
HBT226 |
HBT228 |
HBT229 |
Unit |
| Beta |
120 |
120 |
120 |
|
| Vbe |
1.39 |
1.34 |
1.34 |
Volts |
| BVCEO |
14.5 |
14 |
18 |
Volts |
| BVCBO |
25 |
25 |
33 |
Volts |
| BVEBO |
9 |
7 |
7 |
Volts |
| Ft |
31 |
39 |
30 |
GHz |
| Fmax |
41 |
48 |
43 |
GHz |
Applications
- Quad Band GSM PA
- CDMA PA; Cellular and PCS
- 4G PA ; LTE
- Gain Block
- WiFi (802.11a/b/g/n/ac/ax)