0.15um E-pHEMT

Features

- MOCVD Epitaxial, High Gm
- ESD Protection Diode
- 0.15um T-Gate Enhancement Mode FET
- 1,400 Ohm/Square High Thin Film Resistor
- 2-Layers Metal Technology
- Gold (Au) Metallization
- PECVD Si3N4 Capacitor
- Airbridge Process
- Copper Pillar Bump Process

Specification

Parameter		Typical	Unit
E-pHEMT	Ids@Vgs=0.7V	130	mA/mm
	Ids@Vgs=0V	0.0001	mA/mm
	VPo	0.3	V
	Gm0@0.7V	1000	mS/mm
	Ron@0.7V	1.4	mm*ohm
	BVdgo	12	V
	Ft	105	GHz
	Fmax	117	GHz
	NFmin (@ 6 GHz)	0.3	dB

Applications

- LNB
- Pre-5G: Sub-6GHz
- 5G: 28GHz