IPD

Features

- 7 Mask Layer IC Process
- 3 Layers Evaporated Au Metal Up To 9um for High Q Inductor
- Chip Size Reduction by 3 Layers Metal
- Good Isolation on GaAs Substrate

Specification

Parameter	Typical	Unit
Cap	940	pF/mm^2
Cap_BV	>55	Volts

Applications

- Off-chip Matching Elements for PA Module