| Technology |
Description |
Application |
| HBT226 |
High Beta 120, Build-in EMTR Resistor ED-FET |
(W)CDMA ; LTE ; WiFi 11.ac/ax ; FET for Bias Control |
| HBT228 |
High Beta 120, High Linearity |
Edge ; (W)CDMA ; LTE ; WiFi 11.ac/ax, Gain Block |
| HBT229 |
High Beta 120, High Breakdown 18V and High ruggedness |
GSM, Gain Block, Infrastructure |
| Technology |
Description |
Application |
0.5um
D-pHEMT
(SW6) |
0.5 um Optical Gate Stepper Lithography; Low Insertion Loss and High Isolation |
Switch ; Low Noise Amplifiers |
0.5um
ED pHEMT
(P50ED) |
0.5 um Optical T-Gate Process ; Low Ron and Low Gate Capacitance ; High ESD Protection Diode |
Switch ; Low Noise Amplifiers |
0.25um
ED pHEMT
(P25ED) |
0.25um T-Gate Depletion / Enhancement Mode FET |
Switch ; LNA ; Pre-5G: Sub-6GHz |
0.15um
E pHEMT
(P15ED) |
Optical Lithorgraphy 0.15um T-Gate Enhancement Mode FET |
Switch ; LNA ; Pre-5G: Sub-6GHz ; 5G (Upto 28 GHz); LNB |
0.25um
ED Bi-HEMT
(EDB25) |
Highly Integration For PA+SW+LNA |
WiFi ; Entry Level 5G |