0.25um ED pHEMT

Features

- Integrated HBT And 0.25um ED-Mode pHEMT
- 18 Mask Layers Including Backside Via Holes (3-Layer Metal)
- Standard HBT Process and additional 3 Layers for 0.25um pHEMT
- TaN Resistor, Si3N4 Capacitor, Gold (Au) Metallization
- 3-Layer Metal, Polyimide/Si3N4 Technology
- Backside Via Holes Or Bump Process

Specification

HBT Spec.		Typical	Unit
Q4 (4 um2)	Beta	120
	BVebo	7	Volts
	BVcbo	25	Volts
	BVceo	14	Volts
TFRT		50	Ohm/[]
MIM Cap		940	pF/mm^2
STKCAP		1300	pF/mm^2
D-pHEMT Parameters		Typical	Unit
Idss		240	mA/mm
Imax@0.6V		450	mA/mm
Vpo		-0.8	V
Gm0@0V		415	mS/mm
Ron@0V		1.3	mm*ohm
BVdgo		12.0	V
E-pHEMT Parameters		Typical	Unit
Ids@Vgs=0.7V		120	mA/mm
Ids@Vgs=0V		0.0001	mA/mm
Vpo		0.3	V
Gm0@0.7V		650	mS/mm
Ron@0.7V		1.6	mm*ohm
BVdgo		13	V

Applications

- Highly Intergration PA + SW + LNA