0.25um ED pHEMT

Features

- MOCVD Epitaxial
- ESD Protection Diode
- 0.25um T-Gate N-Channel Depletion Mode FET
- 0.25um T-Gate N-Channel Enhancement Mode FET
- P-Channel FET (Optional)
- 1,400 Ohm/Square Thin Film Resistor
- 2-Layers Metal Technology
- Gold (Au) Metallization
- PECVD Si3N4 Capacitor and Passivation
- Backside Via Process or Copper Pillar Bump Process

Specification

Parameter		Typical	Unit
D-pHEMT	Idss	270	mA/mm
	Imax@0.6V	420	mA/mm
	VPo	-1	V
	Gm0@0V	350	mS/mm
	Ron@0V	1.3	mm*ohm
	BVdgO	10.5	V
	Ft	55	GHz
	Fmax	70	GHz
E-pHEMT	Ids@Vgs=0.7V	120	mA/mm
	Ids@Vgs=0V	0.0001	mA/mm
	VPo	0.25	V
	Gm0@0.7V	650	mS/mm
	Ron@0.7V	1.5	mm*ohm
	BVdgo	10.5	V
	Ft	69	GHz
	Fmax	96	GHz
	NFmin (@ 6 GHz)	0.51	dB

Applications

- SW, LNA, PA For 5G
- Pre-5G: Sub-6GHz